DX-like properties of theEL6defect family in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.1358/fulltext
Reference45 articles.
1. Precise evaluation of deep‐level concentrations in capacitance transient analyses
2. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs
3. Evidence for EL6 (Ec− 0.35 eV) acting as a dominant recombination center inn‐type horizontal Bridgman GaAs
4. Identification of a defect in a semiconductor:EL2 in GaAs
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