Precise evaluation of deep‐level concentrations in capacitance transient analyses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357782
Reference14 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Isothermal Capacitance Transient Spectroscopy
3. Direct Trap-Density Analysis with Junction Capacitance Transient: Trap Density Spectroscopy (TDS)
4. Equivalence of donor and acceptor fits of temperature‐dependent carrier‐concentration data
5. Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy
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1. Activation energies of the EL6 trap and of the 0.15 eV donor and their correlation in GaAs;Semiconductor Science and Technology;2000-10-12
2. Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
3. Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs;Journal of Applied Physics;1998-09-15
4. DX-like properties of theEL6defect family in GaAs;Physical Review B;1998-07-15
5. Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
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