Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.7505/fulltext
Reference23 articles.
1. Non-Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys
2. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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1. Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN;Applied Physics Letters;2016-10-10
2. Deep Centers in Semiconductors;Materials Science and Technology;2013-02-15
3. Bipolaron mechanism of DX center in AlxGa1-xAs:Si;Acta Physica Sinica;2010
4. Optical cross sections of deep levels in 4H-SiC;Journal of Applied Physics;2006-09
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