Non-Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys-Reference-Cited by-同舟云学术

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Non-Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys

Published:1981-06-01 Issue:2 Volume:105 Page:777-787
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Saxena A. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. GaAs lower conduction-band minima: Ordering and properties

2. Energy-Band Structure of Aluminum Arsenide

3. Optical properties and band structure of III–V compounds and alloys

4. Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article)

5. Handbook of Electronic Materials, Vol. 7, IFI/Plenum Data Corporation, New York 1971 (p. 8).

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