Simulation of Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes

Abstract

Al0.85Ga0.15As0.56Sb0.44 is a promising avalanche material for near infrared avalanche photodiodes (APDs) because they exhibit very low excess noise factors. However electric field dependence of ionization coefficients in this material have not been reported. We report a Simple Monte Carlo model for Al0.85Ga0.15As0.56Sb0.44, which was validated using reported experimental results of capacitance-voltage, avalanche multiplication and excess noise factors from five APDs. The model was used to produce effective ionization coefficients and threshold energies between 400–1200 kV.cm-1 at room temperature, which are suitable for use with less complex APD simulation models.