Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN
Author:
Affiliation:
1. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Swiss National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964466
Reference21 articles.
1. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
2. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
3. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
4. Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
5. Electrical defects in AlGaN and InAlN
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1. Transient photocapacitance spectroscopy on Au/TiO2 Schottky diodes with rolled-up nanomembrane electrodes;Journal of Applied Physics;2023-02-14
2. Study of ion-implanted nitrogen related defects in diamond Schottky barrier diode by transient photocapacitance and photoluminescence spectroscopy;Japanese Journal of Applied Physics;2021-02-09
3. Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies;Journal of Applied Physics;2018-10-14
4. Photocapacitance characterization of deep levels in InGaAs/GaAsSb type-II MQW photodiodes;Infrared Physics & Technology;2018-01
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