Optical cross sections of deep levels in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2344809
Reference33 articles.
1. Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
2. Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
3. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
4. Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor
5. Calculation of Nonradiative Multiphonon Capture Coefficients and Ionization Rates for Neutral Centres According to the Static Coupling Scheme II. Alternative Trap Models
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2. Hole capture cross section of the Al acceptor level in 4H-SiC;Materials Today Communications;2022-06
3. Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts;The European Physical Journal Applied Physics;2019-01
4. Patterned tungsten disulfide/graphene heterostructures for efficient multifunctional optoelectronic devices;Nanoscale;2018
5. Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes;Applied Physics Letters;2017-03-27
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