Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.4481/fulltext
Reference32 articles.
1. Te and Ge — doping studies in Ga1−xAlxAs
2. Long‐lifetime photoconductivity effect inn‐type GaAlAs
3. An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type AlxGa1-xAs
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Donor energy level for Se in Ga1−xAlxAs
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