Deep donor levels (DXcenters) in III‐V semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345628
Reference164 articles.
1. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
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