The influence of boron ion implantation on hydrogen blister formation in n-type silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371343
Reference22 articles.
1. Application of hydrogen ion beams to Silicon On Insulator material technology
2. The History, Physics, and Applications of the Smart-Cut® Process
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4. Plasma Contamination and Wall Erosion in Thermonuclear Reactors
5. Modal ranges of 400 - 1800 keV4He+ions in si measured via blistering
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