Modal ranges of 400 - 1800 keV4He+ions in si measured via blistering
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/01422448008218680
Reference8 articles.
1. Self‐diffusion in silicon as probed by the ( p,γ) resonance broadening method
2. Range-Energy Relation for Low-Energy Alpha Particles in Si, Ge, and InSb
3. Investigation of 28Si levels with the (α, γ) and (p, γ) reactions
4. On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures
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