In situ observation of gas reemission and blister rupture during helium implantation in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839601
Reference19 articles.
1. Development of surface topography due to gas ion implantation
2. Blister formation of tungsten due to ion bombardment
3. Surface blistering of ion irradiated SiC studied by grazing incidence electron microscopy
4. Blister formation and erosion due to blister fracture of SiC or Si
5. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
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1. Irradiation of nanoporous structures with light and heavy low-energy ions: Sputtering enhancement and pore sealing;Journal of Vacuum Science & Technology A;2020-09
2. Molecular-Dynamics Simulation of Silicon Irradiation with Low-Energy Noble Gas Ions;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-07
3. In situ controlled modification of the helium density in single helium-filled nanobubbles;Journal of Applied Physics;2014-03-28
4. In situ probing of helium desorption from individual nanobubbles under electron irradiation;Applied Physics Letters;2011-04-25
5. Quantitative characterization of xenon bubbles in silicon: Correlation of bubble size with the damage generated during implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-02
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