In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces
Author:
Affiliation:
1. Department of Physics, UMBC, Baltimore, Maryland 21250, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896501
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1. Atomic Layer Deposition: An Overview
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4. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
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