Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

Published:2020-11-19 Issue:12 Volume:2 Page:3915-3922
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

D’Acunto Giulio¹^ORCID,Troian Andrea¹,Kokkonen Esko²,Rehman Foqia¹,Liu Yen-Po¹,Yngman Sofie¹,Yong Zhihua¹,McKibbin Sarah R.¹,Gallo Tamires¹^ORCID,Lind Erik³,Schnadt Joachim¹²^ORCID,Timm Rainer¹^ORCID

Affiliation:

1. Division of Synchrotron Radiation Research, Department of Physics, and NanoLund, Lund University, Box 118, 221 00 Lund, Sweden

2. MAX IV Laboratory, Lund University, Box 118, 221 00 Lund, Sweden

3. Department of Electrical and Information Technology, and NanoLund, Lund University, Box 118, 221 00 Lund, Sweden

Funder

Vetenskapsr??det

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00775

Reference48 articles.

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4. High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

5. InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax

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