High quality Ge epitaxial layers in narrow channels on Si (001) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3360231
Reference17 articles.
1. P-Channel Germanium FinFET Based on Rapid Melt Growth
2. Subthreshold channels at the edges of nanoscale triple-gate silicon transistors
3. Defect reduction effects in GaAs on Si substrates by thermal annealing
4. Selective epitaxial growth of GaAs on Ge by MOCVD
5. High quality Ge on Si by epitaxial necking
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1. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21
2. Investigations on the Logic Circuit Behaviour of Hybrid CMOSFETs Comprising InGaAs nMOS and Ge pMOS Devices with Barrier Layers;Proceedings of the International Conference on Microelectronics, Computing & Communication Systems;2017-12-30
3. Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
4. Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001);Applied Physics Letters;2016-11-14
5. Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates;Journal of Crystal Growth;2016-04
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