Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)-Reference-Cited by-同舟云学术

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

Published:2016-11-14 Issue:20 Volume:109 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schlykow V.¹,Klesse W. M.¹,Niu G.²,Taoka N.¹,Yamamoto Y.¹,Skibitzki O.¹,Barget M. R.³,Zaumseil P.¹^ORCID,von Känel H.⁴,Schubert M. A.¹,Capellini G.¹⁵^ORCID,Schroeder T.¹⁶

Affiliation:

1. IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, 710049 Xi'an, China

3. Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via Roberto Cozzi 55, 20125 Milano, Italy

4. Laboratory for Solid State of Physics, ETH Zürich, Otto-Stern-Weg 1, 8093 Zürich, Switzerland

5. Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Rome, Italy

6. BTU Cottbus Senftenberg, Institute of Physics and Chemistry, Konrad Zuse Str.1, 03046 Cottbus, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4967500

Reference29 articles.

1. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties

2. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

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4. Lasing in direct-bandgap GeSn alloy grown on Si

5. Growth and applications of GeSn-related group-IV semiconductor materials

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