Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands-Reference-Cited by-同舟云学术

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Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

Published:2009-10-09 Issue:11 Volume:24 Page:115006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

D'Costa Vijay R,Fang Yanyan,Mathews Jay,Roucka Radek,Tolle John,Menéndez José,Kouvetakis John

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 100 Gigabit-per-second: Ultra-high transmission bitrate for next generation optical transport networks

2. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

3. Interband Transitions inSnxGe1−xAlloys

4. Ge–Sn semiconductors for band-gap and lattice engineering

5. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy

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1. Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range;Applied Surface Science;2024-06

3. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics;Journal of Applied Physics;2024-03-22

4. Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles;Nanomaterials;2023-05-22

5. High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect;Laser & Photonics Reviews;2022-10-18

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