Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review

Abstract

Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost, reproducible, and simple process for the mass production of semiconductor lasers with specific structures was realized by means of SAE. This paper presents a review of the applications of SAE in semiconductor lasers. Growth rate enhancement and composition variation, which are two unique characteristics of SAE, are attributed to a mask. The design of the mask geometry enables the engineering of a bandgap to achieve lasing wavelength tuning. SAE allows for the reproducible and economical fabrication of buried heterojunction lasers, quantum dot lasers, and heteroepitaxial III–V compound lasers on Si. Moreover, it enables the fabrication of compact photonic integrated devices, including electro-absorption modulated lasers and multi-wavelength array lasers. Results show that SAE is an economical and reproducible method to fabricate lasers with desired structures. The goals for SAE applications in the future are to improve the performance of lasers and PICs, including reducing the defects of the grown material introduced by the SAE mask and achieving precise control of the thickness and composition.