Subthreshold channels at the edges of nanoscale triple-gate silicon transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2476343
Reference10 articles.
1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
2. Subthreshold behavior of triple-gate MOSFETs on SOI material
3. High performance fully-depleted tri-gate CMOS transistors
4. Suppression of corner effects in triple-gate MOSFETs
5. Improvement of FinFET Electrical Characteristics by Hydrogen Annealing
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