Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference43 articles.
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1. Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments;Scientific Reports;2021-09-22
2. Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies;ECS Journal of Solid State Science and Technology;2021-08-01
3. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si;Journal of Applied Crystallography;2021-06-14
4. Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates;Crystal Growth & Design;2020-04-08
5. Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach;Materials;2019-10-01
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