Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates-Reference-Cited by-同舟云学术

Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates

Published:2020-04-08 Issue:5 Volume:20 Page:2914-2920
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Barzaghi Andrea¹,Firoozabadi Saleh²,Salvalaglio Marco³⁴^ORCID,Bergamaschini Roberto⁵^ORCID,Ballabio Andrea¹^ORCID,Beyer Andreas²,Albani Marco⁵^ORCID,Valente Joao⁶,Voigt Axel³⁴,Paul Douglas J.⁶,Miglio Leo⁵^ORCID,Montalenti Francesco⁵^ORCID,Volz Kerstin²,Isella Giovanni¹^ORCID

Affiliation:

1. L-NESS, Dipartimento di Fisica, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy

2. Materials Science Center and Faculty of Physics, Philipps-Universität Marburg, Hans-Meerweinstraße 6, 35032 Marburg, Germany

3. Institute of Scientific Computing, Technische Universität Dresden, 01062 Dresden, Germany

4. Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062 Dresden, Germany

5. L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, I-20125 Milano, Italy

6. James Watt School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

Funder

Regione Lombardia

H2020 Excellent Science

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b01312

Reference34 articles.

1. Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

2. Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays

3. Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si

4. Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates

5. Perfect crystals grown from imperfect interfaces

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1. Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals;Advanced Optical Materials;2024-04-13

2. Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments;Scientific Reports;2021-09-22

3. Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals;Optics Express;2020-08-10