Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals-Reference-Cited by-同舟云学术

Scaling Hetero-Epitaxy from Layers to Three-Dimensional Crystals

Published:2012-03-16 Issue:6074 Volume:335 Page:1330-1334
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Falub Claudiu V.¹,von Känel Hans¹,Isa Fabio²,Bergamaschini Roberto³,Marzegalli Anna³,Chrastina Daniel²,Isella Giovanni²,Müller Elisabeth⁴,Niedermann Philippe⁵,Miglio Leo³

Affiliation:

1. Laboratory for Solid State Physics, ETH Zürich, Schafmattstrasse 16, CH-8093 Zürich, Switzerland.

2. L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como, Italy.

3. L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 53, I-20126 Milano, Italy.

4. Electron Microscopy Center, ETH Zürich, Schaffmattstrasse 16, CH-8093 Zürich, Switzerland.

5. Centre Suisse d’Electronique et Microtechnique, Jaquet-Droz 1, CH-2002 Neuchatel, Switzerland.

Abstract

Laying It on Thick The growth of one layered material onto a second lies at the heart of many electronic devices. However, if there is a lattice mismatch between the two materials, strains develop in the overgrowth material leading to bowing and cracking. Falub et al. (p. 1330 ; see the cover) patterned Si substrates into a series of pillars onto which they grew a germanium layer. The germanium initially coated the top of each silicon pillar but then widened as the layer thickened, leading to thick, crack-free germanium films.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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2. The Quantized Hall Effect

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