Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies-Reference-Cited by-同舟云学术

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Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies

Published:2021-08-01 Issue:8 Volume:10 Page:084003
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Loo R.^ORCID,Porret C.^ORCID,Han H.,Srinivasan A.^ORCID,Vecchio E.,Depauw V.

Funder

European Space Agency

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/2162-8777/ac1a0b/pdf

Reference27 articles.

1. Impacts of Thermal Annealing on Hydrogen-Implanted Germanium and Germanium-on-Insulator Substrates

2. Fabrication of Ge-on-insulator wafers by Smart-CutTMwith thermal management for undamaged donor Ge wafers

3. Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform;Micromachines;2024-08-22

2. Ge-on-insulator fabrication based on Ge-on-nothing technology;Japanese Journal of Applied Physics;2024-04-01

3. Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs;IEEE Transactions on Electron Devices;2024-01

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