Defect reduction effects in GaAs on Si substrates by thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100257
Reference7 articles.
1. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
2. Dislocation reduction in epitaxial GaAs on Si(100)
3. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
4. Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes
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