Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD-Reference-Cited by-同舟云学术

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Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Published:1984-11-20 Issue:Part 2, No. 11 Volume:23 Page:L843-L845
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Akiyama Masahiro,Kawarada Yoshihiro,Kaminishi Katsuzo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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