Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98303
Reference13 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
3. MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
4. 14.5% conversion efficiency GaAs solar cell fabricated on Si substrates
5. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
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