Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98117
Reference6 articles.
1. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
2. Effects of rf Power and Substrate Temperature on Properties of a-SiNx:H Films Prepared by Glow-Discharge of SiH4–N2–H2
3. Optical properties of GaAs on (100) Si using molecular beam epitaxy
4. [Back matter]
5. Dislocation reduction in epitaxial GaAs on Si(100)
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