Optical properties of GaAs on (100) Si using molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95130
Reference10 articles.
1. Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and Ge
2. Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
3. Molecular beam epitaxial growth of GaP on Si
4. GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates
5. Experiments on Ge-GaAs heterojunctions
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