Dislocation reduction in epitaxial GaAs on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96988
Reference9 articles.
1. Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
2. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
3. Molecular beam epitaxial growth of GaAs on Si(211)
4. Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
5. GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
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