First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping

Published:2022-11 Issue: Volume:603 Page:154440
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chen Weiqu,Luo Haoxun,Chen Zimin,Pei Yanli,Wang Gang,Lu Xing

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Sun Yat-Sen University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference45 articles.

1. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

2. Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy;Murakami;Appl. Phys. Express,2015

3. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties;Feng;Appl. Phys. Lett.,2019

4. Schottky X-ray detectors based on a bulk β-Ga2O3 substrate;Lu;Appl. Phys. Lett.,2018

5. Pulsed x-ray detector based on Fe doped β-Ga2O3 single crystal;Zhou;J. Phys. D: Appl. Phys.,2021

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical role of dopant bond strength in enhancing the conductivity of n-type doped κ-Ga2O3;Physics Letters A;2024-07

2. Fabrication and interface properties of amorphous Ga2O3/GaAs heterojunction;Current Applied Physics;2024-06

3. Improved heteroepitaxy of κ-Ga2O3 on c-plane sapphire by initial mist flow stabilization during mist chemical vapor deposition;Thin Solid Films;2024-02

4. Growth and Performance Enhancement of Sputtered ZnGa₂O₄ MOSFETs on Sapphire Substrates;ACS Applied Electronic Materials;2024-01-17

5. A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact;Micromachines;2024-01-14

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3