Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors-Reference-Cited by-同舟云学术

Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors

Published:2020-01-01 Issue:1 Volume:10 Page:015239
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Choi Wan-Ho¹,Kim MinJung²,Jeon Woojin³^ORCID,Park Jin-Seong¹^ORCID

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea

2. Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, South Korea

3. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1732, Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 17104, South Korea

Funder

Ministry of Trade, Industry, and Energy of Korea

Korea Display Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5126151

Reference16 articles.

1. High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

2. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics