The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO 2 high-k dielectrics

Published:2017-07 Issue: Volume:133 Page:6-9
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang Ruo Zheng,Wu Sheng Li,Li Xin Yu,Zhang Jin Tao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Hysteresis of transfer characteristics of floating-gate a-Si:H thin film transistor nonvolatile memories;Kuo;Electrochem Solid State Lett,2010

3. High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering;Lim;J Electrochem Soc,2008

4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering;Yabuta;Appl Phys Lett,2006

5. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping;Kamiya;J Disp Technol,2009

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes;Journal of Materials Chemistry C;2024

2. Sub-volt metal-oxide thin-film transistors enabled by solution-processed high-k Gd-doped HfO2 dielectric films;Materials Science in Semiconductor Processing;2023-11

3. Effect of Tunable Sub-Source and Sub-Drain Device Behavior in Four-Terminal Operation Using Metal-Capping Thin-Film Transistors;ACS Applied Electronic Materials;2023-10-18

4. The clarification of leakage conduction mechanism of HfO₂/SiN_x stacked a-IGZO TFT and its variation at high temperature;Applied Physics Letters;2022-12-05

5. Temporal Modulation and Synergistic Current Response of Zinc-Tin Oxide/Gold Nanoparticle Phototransistors Triggered by an Electrical–Optical Hybrid Pulse;ACS Applied Electronic Materials;2022-10-27

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3