High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes-Reference-Cited by-同舟云学术

High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes

Published:2024 Issue:2 Volume:12 Page:607-613
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Han¹,Huang Hao¹^ORCID,Peng Chuan¹,Liu Guanshun¹,Liu Jiajie¹,Duan Sili¹,Zou Bingsuo¹^ORCID,Wan Da²

Affiliation:

1. State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China

2. School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan 430081, China

Abstract

Using low-melting point metals (In, Ga) as contact electrodes significantly enhances the performance of sol–gel processed a-IGZO TFTs.

Funder

Natural Science Foundation of Guangxi Zhuang Autonomous Region

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC03497F

Reference46 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Present status of amorphous In–Ga–Zn–O thin-film transistors

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

5. Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays

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