Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor-Reference-Cited by-同舟云学术

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Horizontally aligned ALD-SnO films grown on SiO2-passivated high-k HfO2 dielectrics for high-mobility and low-power P-channel thin-film transistor

Published:2024-01 Issue: Volume:44 Page:103726
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Kim Jina,Jang Hee Won,Chae Myeong Gil,Choi Heenang,Shin Jeong Eun^ORCID,Park Bo Keun^ORCID,Chung Taek-Mo,Han Jeong Hwan^ORCID

Funder

Korea Ministry of Science and ICT

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference45 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Electronic structures and device applications of transparent oxide semiconductors: what is the real merit of oxide semiconductors?;Kamiya;Int. J. Appl. Ceram. Technol.,2005

3. Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping;Kamiya;J. Display. Technol.,2009

4. Material characteristics and applications of transparent amorphous oxide semiconductors;Kamiya;NPG Asia Mater.,2010

5. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

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