Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO2gate insulators by controlling atomic-layer-deposition conditions-Reference-Cited by-同舟云学术

Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO2gate insulators by controlling atomic-layer-deposition conditions

Published:2017-11-17 Issue:49 Volume:50 Page:495109
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Na So-Yeong,Kim Yeo-Myeong,Yoon Da-Jeong,Yoon Sung-Min^ORCID

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa9489/pdf

Reference28 articles.

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3. 69.2:Distinguished Paper: High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV

4. A Review : Improvement of Operation Current for Realization of High Mobility Oxide Semiconductor Thin-film Transistors

5. Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

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