Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture-Reference-Cited by-同舟云学术

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Published:2022-12-07 Issue:2 Volume:9 Page:2201007
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

He Bo¹,He Gang¹^ORCID,Jiang Shanshan²,Liu Jiangwei³,Fortunato Elvira⁴,Martins Rodrigo⁴

Affiliation:

1. School of Materials Science and Engineering Anhui University Hefei 230601 P. R. China

2. School of Integration Circuits Anhui University Hefei 230601 P. R. China

3. Research Center for Functional Materials National Institute for Materials Science (NIMS) Ibaraki 305‐0044 Japan

4. Department of Materials Science/CENIMAT‐I3N, Faculty of Sciences and Technology New University of Lisbon and CEMOP‐UNINOVA Campus de Caparica Caparica 2829‐516 Portugal

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202201007

Reference62 articles.

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2. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

3. The 2016 oxide electronic materials and oxide interfaces roadmap

4. A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

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