Intermittent O2 Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors
Author:
Affiliation:
1. School of Materials Science and Engineering, Anhui University, Hefei, China
2. School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou, China
Funder
National Natural Science Foundation of China
The University Synergy Innovation Program of Anhui Province
Key Natural Science Research Projects in Colleges and Universities in Anhui Province
Scientific Research Project of Colleges and Universities in Anhui Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10167533.pdf?arnumber=10167533
Reference24 articles.
1. Performance Enhancement of Field-Effect Transistors Based on In₂O₃ Nanofiber Networks by Plasma Treatment
2. Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics
3. Low-voltage and high-performance field-effect transistors based on ZnxSn1−xO nanofibers with a ZrOx dielectric
4. Modulating Electrical Performances of In2 O3 Nanofiber Channel Thin Film Transistors via Sr Doping
5. Water- and DUV-induced self-passivation for In2O3 nanofiber field effect transistor
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