Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

Author:

Nam Minkyeong12,Lee Seungwoo12,Jeong Hanseok12,Yoon Ara3,Park Jin‐Seong3,Jeon Woojin12ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics Kyung Hee University Yongin Gyeonggi 17104 South Korea

2. Integrated Education Institute for Frontier Science and Technology (BK21 Four) Kyung Hee University Yongin Gyeonggi 17104 South Korea

3. Division of Materials Science and Engineering Hanyang University Seoul 133‐719 South Korea

Abstract

AbstractThe utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2 is favorable to achieving higher capacitance density in metal–insulator–metal capacitors with ZrO2 thin films, it decreases the capacitance with increasing applied bias in Mo/ZrO2/InGaZnO (IGZO)‐structured MIS capacitors. Through comprehensive physical, chemical, and electrical characterizations, this study investigated the mechanism underlying the decreasing capacitance with increasing the applied bias in the accumulation state of the Mo/ZrO2/IGZO‐structured MIS capacitor depending on the crystallinity of ZrO2. Furthermore, the investigation identifies the optimal crystal structure of ZrO2 thin films for IGZO‐based MIS capacitors, highlighting the importance of forming meso‐crystalline structures in high dielectric constant (k) materials to enhance the k value and mitigating the decrease in capacitance caused by the accumulated carrier loss through grain boundaries of ZrO2.

Funder

LG Display

Korea Basic Science Institute

Korea Evaluation Institute of Industrial Technology

Gyeonggi-do Regional Research Center

Publisher

Wiley

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