Impact of AlSnO Back-Channel Layer on the Performance of AlSnO/InSnZnO Heterojunction Thin-Film Transistors
Author:
Affiliation:
1. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
Funder
National Science and Technology Council, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10482422/10433416.pdf?arnumber=10433416
Reference33 articles.
1. The development of flexible integrated circuits based on thin-film transistors
2. Recent progress in the development of backplane thin film transistors for information displays
3. Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory
4. Investigations of photoresponse characteristics of ultrasonic spray pyrolysis deposited zinc oxide-based phototransistors at different quiescent points
5. Hydrogenated Amorphous Silicon Gate Driver With Low Leakage for Thin-Film Transistor Liquid Crystal Display Applications
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