A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/8/972/pdf
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1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
3. Review of solution-processed oxide thin-film transistors
4. Material characteristics and applications of transparent amorphous oxide semiconductors
5. Review on high-k dielectrics reliability issues
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