Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305555
Reference22 articles.
1. Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
2. High hole mobility in SiGe alloys for device applications
3. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
4. Modulation doping in GexSi1−x/Si strained layer heterostructures
5. Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures;Journal of Applied Physics;2016-06-14
2. A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate;IEEE Electron Device Letters;2009-02
3. Effects of heavy boron doping on the valence band offset at the Si1−xGex∕Si interface and Si1−xGex band gap;Applied Physics Letters;2005-12-19
4. Growth kinetic and doping of Si and SiGe epi layers on fullsheet substrates;Materials Science and Engineering: B;2004-12
5. Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors;Journal of Crystal Growth;2003-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3