Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/4033/00155887.pdf?arnumber=155887
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1. Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy;Applied Physics Letters;2024-02-26
2. High-Throughput Investigation of the Electron Transport Properties in Si₁-ₓGeₓ Alloys;IEEE Access;2021
3. Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission;Japanese Journal of Applied Physics;2020-07-27
4. Theoretical Prediction of Enhanced Thermopower in n-Doped Si/Ge Superlattices Using Effective Mass Approximation;Journal of Electronic Materials;2020-05-10
5. Design and Analysis of a Graded-Index Strained Si $_{1-x}$ Ge $_x$ Optical PN Phase Shifter;IEEE Photonics Journal;2018-12
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