Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference40 articles.
1. Germanium silicon;Hull,1999
2. High-mobility Si and Ge structures
3. Si/SiGe/Si pMOS Performance - alloy scattering and other considerations
4. Ge-on-Si approaches to the detection of near-infrared light
5. Enabling technologies for forming and contacting shallow junctions in Si: HF-vapor cleaning and selective epitaxial growth of Si and SiGe
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