Investigation of Common Source Amplifier Circuit using Gate Stack-Based GAA Dopingless Nanowire Field Effect Transistor

Abstract

Reported work demonstrates the application of common source amplifier circuit using the proposed Gate Stack based Gate All Around Dopingless Nanowire Field Effect Transistor (GS GAA DL NW—FET) structure. Primarily, impact of the gate stack (GS) technique on the conventional Gate All Around Dopingless Nanowire Field Effect Transistor (GAA DL NW—FET) structure is explored. The proposed FET structure resulted in excellent electrostatic control over the channel by incorporating the advantages of GAA architectures and dopingless technique. As transfer characteristics of conventional GAA DL NW—FET have been enhanced with gate stack (SiO2 + high k) technique when employed at dielectric region. A contrast is drawn between both structures in terms of analog parametric analysis which resulted in improved ION of 30.6 (μA), reduced IOFF of 10−7 (μA) and enhanced ION/IOFF of 6.7 × 107. Linearity analysis were made to examine the distortion less digital communication and a fair comparison is depicted between the structures. CS amplifier circuit application with proposed GS GAA DL NW—FET resulted in improved VOUT with 15.2 dB of gain when compared with GAA DL NW—FET based CS amplifier which stood at 13.9 dB which proves the promising candidature for forthcoming nanoscale circuit applications.