Design And Implementation Of Common Source Amplifier Circuit Using Gate All Around Junctionless Dopingless Nanowire TFET-Reference-Cited by-同舟云学术

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Design And Implementation Of Common Source Amplifier Circuit Using Gate All Around Junctionless Dopingless Nanowire TFET

Published:2023-07-14 Issue: Volume: Page:
ISSN:
Container-title:2023 World Conference on Communication & Computing (WCONF)
language:
Short-container-title:

Author:

Trehan Mayank¹,Kumar Pradeep¹

Affiliation:

1. ASET Amity University,Dept. of ECE,Noida,Uttar Pradesh,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10234727/10234833/10235094.pdf?arnumber=10235094

Reference36 articles.

1. Design and Analysis of Gate Engineered Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor

2. Simulation study of hetero dielectric tri material gate tunnel FET based common source amplifier circuit

3. Comparative analysis of double gate FinFET configurations for analog circuit design

4. 6-T and 7-T SRAM CELL design using doping-less charge plasma TFET;harsimran kaur;Silicon,2021

5. Multi-gate SOI MOSFETs

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