A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate-Reference-Cited by-同舟云学术

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A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

Published:2009-02 Issue:2 Volume:30 Page:123-125
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yao-Jen Lee ,Fu-Kuo Hsueh ,Shih-Chiang Huang ,Kowalski J.M.,Kowalski J.E.,Cheng A.,Ann Koo ,Guang-Li Luo ,Ching-Yi Wu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4757318/04717299.pdf?arnumber=4717299

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on dopant activation and EOT impact in HKMG stacks using microwave annealing with different frequencies;Japanese Journal of Applied Physics;2024-02-15

2. Improved Electrical and Optical Properties of IGZO Transparent Conductive Oxide Due to Microwave Treatment: Application to Silicon Solar Cells;IEEE Access;2022

3. Thin-Entrance Window Process for Soft X-Ray Sensors;Frontiers in Physics;2021-03-18

4. Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping;ACS Omega;2021-01-04

5. A Strategy for Optimizing Low Operating Voltage in a Silicon Biristor;IEEE Transactions on Nanotechnology;2020

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