Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping-Reference-Cited by-同舟云学术

Investigation of Boron Distribution at the SiO2/Si Interface of Monolayer Doping

Published:2021-01-04 Issue:1 Volume:6 Page:733-738
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Hsu Shu-Han¹^ORCID,Wan Chia-Chen²,Cho Ta-Chun³,Lee Yao-Jen³

Affiliation:

1. Sirindhorn International Institute of Technology (SIIT), Thammasat University, Pathum Thani 12120, Thailand

2. Department of Electronics Engineering, National Chiao-Tung University, Rm. 107, Engineering Building D, Kuang-Fu Campus, No. 1001, University Road, Hsinchu, Taiwan

3. Taiwan Semiconductor Research Institute, Hsinchu, Taiwan

Funder

Sirindhorn International Institute of Technology, Thammasat University

National Science Council

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.0c05282

Reference20 articles.

1. Controlled nanoscale doping of semiconductors via molecular monolayers

2. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing

3. Boosting the Boron Dopant Level in Monolayer Doping by Carboranes

4. Controlling the Dopant Dose in Silicon by Mixed-Monolayer Doping

5. Boron Monolayer Doping: Role of Oxide Capping Layer, Molecular Fragmentation, and Doping Uniformity at the Nanoscale

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bridging the gap between surface physics and photonics;Reports on Progress in Physics;2024-03-06

2. Ti supersaturated Si by microwave annealing processes;Semiconductor Science and Technology;2023-01-13

3. Boron Doping in Next-Generation Materials for Semiconductor Device;Characteristics and Applications of Boron;2022-10-26

4. Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors;ACS Applied Electronic Materials;2022-06-27

5. Study of the Molecule Adsorption Process during the Molecular Doping;Nanomaterials;2021-07-24