Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Fabrication of a Si1-xGexChannel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Published:1993-01-30 Issue:Part 1, No. 1B Volume:32 Page:438-441
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Goto Kinya,Murota Junichi,Maeda Takahiro,SchÜtz Reiner,Aizawa Kiyohito,Kircher Roland,Yokoo Kuniyoshi,Ono Shoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating;Materials Science in Semiconductor Processing;2017-11

2. An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si1−x Gex Films for Non-Alloyed Ohmic Contact;Journal of Nanoscience and Nanotechnology;2017-10-01

3. Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances;Solid-State Electronics;2013-07

4. (Invited) Atomically Controlled CVD Processing of Group IV Semiconductors for Strain Engineering and Doping in Ultralarge Scale Integration;ECS Transactions;2013-06-28

5. (Invited) Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures by Low-Pressure Chemical Vapor Deposition;ECS Transactions;2013-03-15

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