Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2883939
Reference16 articles.
1. Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
2. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
3. Single-crystal GaN/Gd2O3/GaN heterostructure
4. Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si
5. Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
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