Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1320464
Reference10 articles.
1. Thermodynamic stability of binary oxides in contact with silicon
2. Titanium dioxide (TiO2)-based gate insulators
3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. Hafnium and zirconium silicates for advanced gate dielectrics
5. Growth and dielectric characterization of yttrium oxide thin films deposited on Si by r.f.-magnetron sputtering
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